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Freescale Semiconductor Technical Data
MRFG35010 Rev. 6, 12/2004
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. * Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 1 Watt Power Gain -- 10 dB Efficiency -- 30% * 10 Watts P1dB @ 3.55 GHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity
MRFG35010
3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT
CASE 360D-02, STYLE 1 NI-360HF
Table 1. Maximum Ratings
Rating Drain-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Gate-Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 28.3 0.19 -5 33 -65 to +175 175 -20 to +90 Unit Vdc W W/C Vdc dBm C C C
Operating Case Temperature Range
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Class A Class AB Symbol RJC Value 5.3 4.8 Unit C/W
1. For reliable operation, the operating channel temperature should not exceed 150C.
(c) Freescale Semiconductor, Inc., 2004. All rights reserved.
MRFG35010 5-1
Freescale Semiconductor Wireless RF Product Device Data
Table 3. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = -0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = -1.9 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = -2.5 Vdc) Gate-Source Cut-off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 180 mA) Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 1.0 W Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 1.0 W Avg., IDQ = 180 mA, f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Gps P1dB hD Min -- -- -- -- -1.2 -1.0 9.0 -- 23 Typ 2.9 < 1.0 0.09 5.0 -0.8 -0.8 10 10 30 Max -- 100 1.0 15 -0.7 -0.5 -- -- -- Unit Adc Adc mAdc mAdc Vdc Vdc dB W %
ACPR
--
-42
-40
dBc
MRFG35010 2 Freescale Semiconductor Wireless RF Product Device Data
VDD R7 C12 R2
1 8
Q1 R1 C14 C13 C15 R9 C9 R5 C10 R4 R6 C7 C8 C6 C5 C4 C3 C2 C17 C16 C18 C19 C20
D1
NC R3
C11
2 3 4
U1
7 6 5
R8
Z9 RF INPUT Z8 Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7
Z10 Z11 Z12 Z13 Z14 Z15 Z16 C21 Z17
RF OUTPUT
C1, C21 C2, C20 C3, C19 C4, C18 C5, C10, C16, C17 C6, C11, C12, C15 C7, C14 C8, C13 C9 D1 R1 R2 R3 R4 R5 R6 R7 R8, R9
6.8 pF Chip Capacitors, ATC 10 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 100 pF Chip Capacitors, ATC 1000 pF Chip Capacitors, ATC 0.1 F Chip Capacitors, ATC 39K Chip Capacitors, ATC 22 F Tantalum Chip Capacitors 6.8 F Tantalum Chip Capacitor 5.1 V Zener Diode, MA8051CT-ND 22.1 k, 1/4 W 1%, Chip Resistor 5K Trim Pot, #3224W-1-502E 12 k, 1/4 W 1%, Chip Resistor 100 k, 1/4 W 1%, Chip Resistor 39 k, 1/4 W 1%, Chip Resistor 10 , 1/4 W 1%, Chip Resistor 2.2 k, 1/4 W 1%, Chip Resistor 50 , 1/4 W 1%, Chip Resistors
U1 Q1 PCB Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z11 Z9, Z10 Z12 Z13 Z14 Z15 Z16 Z17
Voltage Converter, LTC 1261 Switch, MTP23P06V Rogers RO4350, 0.020, r = 3.50 0.044 x 0.250 Microstrip 0.044 x 0.030 Microstrip 0.615 x 0.050 Microstrip 0.044 x 0.070 Microstrip 0.270 x 0.490 Microstrip 0.044 x 0.470 Microstrip 0.434 x 0.110 Microstrip 0.015 x 0.527 Microstrip 0.290 x 90 Microstrip Radial Stub 0.184 x 0.390 Microstrip 0.040 x 0.580 Microstrip 0.109 x 0.099 Microstrip 0.030 x 0.225 Microstrip 0.080 x 0.240 Microstrip 0.044 x 0.143 Microstrip
Figure 1. 3.4 - 3.6 GHz Single Supply Bias Sequencing Test Circuit Schematic
MRFG35010 Freescale Semiconductor Wireless RF Product Device Data 3
VDD = 12 V C11 R1 R2 C8 R6 R3 R4 C10 R5 C9 C4 C3 C17 U1 C12 D1
R7
G D S Q1
R9 C13 C16 C15 C14 C19
C18
GND
C7
C6
C5
C20 C2 R8
INPUT C1 CUT OUT AREA OUTPUT C21
MRFG35010 Rev-06
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 3.4 - 3.6 GHz Test Circuit Component Layout
MRFG35010 4 Freescale Semiconductor Wireless RF Product Device Data
TYPICAL CHARACTERISTICS
13.5 13 G ps , POWER GAIN (dB) 12.5 12 11.5 11 D Gps VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA S = 0.857e-144.24_, L = 0.798e-164.30_ 80 70 D , DRAIN EFFICIENCY (%) D , DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 60 50 40 30 20 10 0.1 1 Pout, OUTPUT POWER (WATTS) 10 0
10.5 10 9.5
Figure 3. Power Gain and Drain Efficiency versus Output Power
0 -10 -20 ACPR (dBc) -30 -40 -50 -60 -70 0.1 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA S = 0.857e-144.24_, L = 0.798e-164.30_ 1 Pout, OUTPUT POWER (WATTS) ACPR IRL 0 -10 -20 -30 -40 -50 -60 -70 10
Figure 4. W-CDMA ACPR and Input Return Loss versus Output Power
36 34 Pout , OUTPUT POWER (dBm) 32 30 28 26 24 22 20 5 10 15 Pin, INPUT POWER (dBm) 20 25 0 Pout D 15 30 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 dB P/A 3GPP W-CDMA S = 0.857e-144.24_, L = 0.798e-164.30_ 60
45
Figure 5. W-CDMA Output Power and Drain Efficiency versus Input Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35010 Freescale Semiconductor Wireless RF Product Device Data 5
f = 3600 MHz Zload f = 3500 MHz Zo = 25
Zsource f = 3600 MHz f = 3500 MHz
VDD = 12 V, IDQ =180 mA, Pout = 1 W f MHz 3500 3550 3600 Zsource 4.3 - j16.3 4.2 - j16.0 4.1 - j15.8 Zload 5.7 - j7.0 5.7 - j6.8 5.7 - j6.6
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 6. Series Equivalent Source and Load Impedance
MRFG35010 6 Freescale Semiconductor Wireless RF Product Device Data
Table 4. Class A Common Source S-Parameters at VDS = 12 Vdc, IDQ = 1000 mA
f GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 S11 |S11| 0.956 0.957 0.956 0.956 0.954 0.955 0.954 0.952 0.952 0.950 0.950 0.948 0.946 0.944 0.943 0.942 0.940 0.938 0.937 0.935 0.934 0.932 0.928 0.926 0.923 0.920 0.917 0.913 0.908 0.903 0.897 0.893 0.884 0.875 0.866 0.851 0.833 0.814 0.793 0.771 0.748 0.723 0.697 0.672 0.647 0.622 -177.95 -179.86 178.44 177.05 175.83 174.61 173.42 172.29 171.25 170.02 168.36 167.24 166.01 164.67 163.59 162.31 161.09 159.66 158.30 156.86 155.35 153.83 152.26 150.58 148.97 147.18 145.27 143.23 141.12 138.91 136.46 133.77 130.86 127.58 124.06 120.13 115.98 111.48 106.69 101.44 95.69 89.38 82.41 74.51 65.82 56.14 |S21| 5.591 4.668 4.007 3.520 3.138 2.842 2.604 2.402 2.236 2.098 2.054 1.944 1.850 1.769 1.698 1.638 1.580 1.532 1.491 1.454 1.422 1.396 1.375 1.356 1.342 1.332 1.328 1.326 1.329 1.335 1.346 1.360 1.375 1.393 1.417 1.443 1.472 1.505 1.541 1.581 1.622 1.668 1.721 1.771 1.818 1.860 S21 79.60 76.30 73.21 70.18 67.20 64.30 61.65 58.87 56.13 53.34 50.41 47.63 44.77 42.06 39.29 36.53 33.69 30.84 28.03 25.19 22.38 19.54 16.68 13.80 10.91 7.87 4.88 1.73 -1.48 -4.80 -8.26 -11.89 -15.61 -19.50 -23.55 -27.75 -32.06 -36.63 -41.44 -46.57 -51.82 -57.33 -63.32 -69.70 -76.56 -83.67 |S12| 0.007 0.007 0.008 0.008 0.009 0.010 0.009 0.011 0.011 0.011 0.011 0.012 0.013 0.014 0.015 0.015 0.016 0.017 0.017 0.019 0.020 0.021 0.022 0.023 0.025 0.027 0.028 0.030 0.032 0.034 0.036 0.039 0.042 0.045 0.048 0.052 0.056 0.060 0.065 0.071 0.076 0.082 0.089 0.096 0.103 0.110 S12 15.64 23.81 23.84 26.09 30.55 28.91 31.64 31.90 36.06 33.99 32.65 32.47 37.07 34.40 35.71 37.47 35.82 35.69 35.43 34.19 34.10 35.51 33.15 30.84 31.00 29.11 28.98 27.36 25.93 24.33 22.30 19.80 17.46 15.22 13.31 10.27 7.36 4.18 1.13 -3.19 -7.50 -11.79 -16.57 -22.28 -28.04 -33.91 |S22| 0.741 0.739 0.736 0.736 0.735 0.735 0.734 0.735 0.735 0.736 0.725 0.725 0.725 0.725 0.725 0.724 0.724 0.722 0.721 0.720 0.718 0.718 0.716 0.714 0.711 0.708 0.704 0.699 0.694 0.687 0.679 0.670 0.659 0.648 0.636 0.626 0.618 0.609 0.602 0.592 0.582 0.575 0.568 0.559 0.549 0.539 S22 179.71 179.15 178.75 178.29 177.85 177.42 176.95 176.52 175.97 175.52 174.86 174.31 173.70 172.90 172.32 171.58 170.75 169.89 169.04 168.15 167.32 166.38 165.61 164.67 163.77 162.89 161.96 161.08 160.09 159.09 158.02 156.93 155.90 154.96 154.06 153.16 152.14 151.13 149.84 148.47 147.06 145.72 144.03 142.02 139.82 137.39
MRFG35010 Freescale Semiconductor Wireless RF Product Device Data 7
Table 5. Class AB Common Source S-Parameters at VDS = 12 Vdc, IDQ = 180 mA
f GHz 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 4.60 4.70 4.80 4.90 5.00 S11 |S11| 0.936 0.936 0.935 0.935 0.935 0.934 0.934 0.933 0.933 0.933 0.929 0.930 0.927 0.926 0.925 0.923 0.921 0.920 0.918 0.916 0.916 0.913 0.912 0.909 0.907 0.904 0.901 0.896 0.893 0.887 0.882 0.876 0.870 0.863 0.853 0.840 0.825 0.807 0.787 0.767 0.745 0.721 0.697 0.674 0.647 0.622 -175.05 -177.28 -179.21 179.21 177.77 176.46 175.26 174.05 172.86 171.71 170.06 168.89 167.73 166.37 165.33 164.05 162.82 161.49 160.17 158.74 157.35 155.97 154.45 152.83 151.25 149.54 147.76 145.88 143.83 141.78 139.43 136.99 134.24 131.29 127.96 124.33 120.40 116.26 111.78 106.97 101.74 95.90 89.39 82.09 73.93 64.84 |S21| 5.292 4.422 3.803 3.341 2.983 2.701 2.473 2.284 2.124 1.991 1.948 1.845 1.757 1.678 1.610 1.551 1.498 1.451 1.411 1.376 1.347 1.321 1.300 1.280 1.268 1.257 1.253 1.253 1.255 1.260 1.268 1.281 1.295 1.311 1.334 1.354 1.386 1.414 1.453 1.492 1.537 1.579 1.633 1.685 1.740 1.790 S21 80.70 77.20 74.02 70.87 67.85 64.80 62.00 59.24 56.47 53.70 50.73 47.88 44.99 42.32 39.48 36.70 33.90 31.07 28.22 25.43 22.58 19.80 16.98 14.05 11.14 8.18 5.20 2.11 -1.10 -4.43 -7.81 -11.29 -14.96 -18.72 -22.68 -26.85 -31.01 -35.40 -40.01 -44.83 -49.99 -55.50 -61.25 -67.46 -74.01 -81.02 |S12| 0.014 0.014 0.015 0.014 0.014 0.015 0.015 0.014 0.015 0.015 0.016 0.016 0.016 0.016 0.017 0.018 0.018 0.018 0.019 0.020 0.020 0.021 0.022 0.023 0.024 0.026 0.026 0.028 0.030 0.031 0.033 0.035 0.038 0.040 0.042 0.046 0.049 0.053 0.057 0.061 0.066 0.071 0.077 0.084 0.090 0.097 S12 3.73 3.63 3.78 7.22 5.83 7.03 7.15 6.85 6.90 8.93 7.81 8.58 8.16 10.00 9.25 11.89 10.06 10.11 10.86 9.05 8.57 9.64 10.23 9.68 10.24 7.35 9.11 6.33 7.09 5.16 4.74 4.34 1.64 0.43 -2.33 -4.01 -6.67 -9.06 -11.29 -14.79 -18.66 -22.20 -26.02 -30.63 -35.78 -41.70 |S22| 0.735 0.735 0.735 0.736 0.738 0.738 0.738 0.739 0.740 0.739 0.730 0.731 0.731 0.730 0.732 0.731 0.731 0.730 0.729 0.728 0.727 0.727 0.725 0.723 0.719 0.717 0.714 0.709 0.704 0.697 0.690 0.682 0.672 0.660 0.650 0.639 0.632 0.624 0.617 0.608 0.599 0.589 0.580 0.569 0.557 0.545 S22 -178.66 -179.61 179.80 179.20 178.58 178.09 177.54 177.01 176.42 175.92 175.22 174.51 173.88 173.09 172.45 171.71 170.85 170.01 169.14 168.25 167.43 166.51 165.61 164.76 163.70 162.83 161.86 160.85 159.82 158.76 157.60 156.46 155.26 154.16 153.12 152.16 150.97 149.72 148.33 146.78 145.00 143.33 141.41 139.21 136.94 134.20
MRFG35010 8 Freescale Semiconductor Wireless RF Product Device Data
NOTES
MRFG35010 Freescale Semiconductor Wireless RF Product Device Data 9
NOTES
MRFG35010 10 Freescale Semiconductor Wireless RF Product Device Data
PACKAGE DIMENSIONS
2x
K
G
1
(INSULATOR)
S
(FLANGE) 2
B
bbb
3 2x
M
TA
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED .030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX .795 .805 .225 .235 .125 .176 .034 .044 .055 .065 .004 .006 .562 BSC .077 .087 .085 .115 .355 .365 .355 .365 .125 .135 .225 .235 .225 .235 .005 .010 .015 MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.47 0.89 1.12 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 2.16 2.92 9.02 9.27 9.96 10.16 3.18 3.43 5.72 5.97 5.72 5.97 0.13 0.25 0.38
B bbb N (LID) ccc
M M
D TA
2x M
Q bbb
M
TA
M
B
M
B
M
TA
M
B
M
R (LID) ccc C
M
TA
M
B H
M
E
F
T
SEATING PLANE
(INSULATOR)
M
DIM A B C D E F G H K M N Q R S aaa bbb ccc
aaa A
M
TA
M
B
M
STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE
A
CASE 360D-02 ISSUE B NI-360HF
MRFG35010 Freescale Semiconductor Wireless RF Product Device Data 11
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MRFG35010 5-12
Document Number: MRFG35010 Rev. 6, 12/2004
Freescale Semiconductor Wireless RF Product Device Data

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